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DG2735/DG2736 Vishay Siliconix Low Voltage, 0.5 , Dual SPDT Analog Switch DESCRIPTION The DG2735/2736 are low voltage, low on-resistance, dual single-pole/double-throw (SPDT) monolithic CMOS analog switches designed for high performance switching of analog signals. Combining low-power, high speed, low on-resistance, and small package size, the DG2735/2736 are ideal for portable and battery power applications. The DG2735/2736 have an operation range from 1.65 V to 4.3 V single supply. The DG2735 has two separate control pins with for the separated two SPDT switched. The DG2736 has an EN pin. All switches are at high impedance mode when the EN is high. The DG2735/2736 are guaranteed 1.65 V logic compatible, allowing the easy interface with low voltage DSP or MCU control logic and ideal for one cell Li-ion battery direct power. The switch conducts signals within power rails equally well in both directions when on, and blocks up to the power supply level when off. Break-before-make is guaranteed. The DG2735/2736 are built on Vishay Siliconix's sub micron CMOS low voltage process technology and provides greater than 300 mA latch-up protection, as tested per JESD78. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with lead (Pb)-free device terminations. DG2735/2736 are offered in a miniQFN package. The miniQFN package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free "-E4" suffix. The nickel-palladium-gold device terminations meet all JEDEC standards for reflow and MSL ratings. FEATURES * * * * Low Voltage Operation (1.65 V to 4.3 V) Low On-Resistance - rON: 0.5 at 2.7 V Fast Switching: TON = 55 ns at 2.7 V TOFF = 40 ns at 2.7 V * Latch-Up Current > 300 mA (JESD78) RoHS COMPLIANT BENEFITS * * * * Reduced Power Consumption High Accuracy Reduce Board Space TTL/1.65 V Logic Compatible APPLICATIONS * * * * * * Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems Portable media player * Handheld test instruments FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG2735 miniQFN-10L GND NC2 DG2736 miniQFN-10L NC2 GND 6 5 NC1 IN1 COM1 7 IN2 COM2 NO2 8 9 10 1 V+ Pin 1: LONG LEAD 6 5 NC1 IN1 COM1 EN COM2 NO2 8 9 10 7 Ax 4 3 2 NO1 Bx 4 3 1 V+ Pin 1: LONG LEAD Device Marking: Ax for DG2735 Device Marking: Bx for DG2736 x = Date/Lot Traceability Code 2 NO1 Document Number: 74420 S-62532-Rev. A, 01-Jan-07 www.vishay.com 1 DG2735/DG2736 Vishay Siliconix TRUTH TABLE Logic 0 1 0 1 EN (DG2736 only) 1 1 0 0 NC1, 2 OFF OFF ON OFF NO1, 2 OFF OFF OFF ON ORDERING INFORMATION Temp Range - 40 to 85C Package miniQFN10 Part Number DG2735DTN-T1-E4 DG2736DTN-T1-E4 ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Symbol Limit Unit V+ - 0.3 to 5.0 Reference to GND V - 0.3 to (V+ + 0.3) IN, COM, NC, NOa Current (Any terminal except NO, NC or COM) 30 mA Continuous Current (NO, NC, or COM) 250 Peak Current (Pulsed at 1 ms, 10 % duty cycle) 500 Storage Temperature (D Suffix) - 65 to 150 C Power Dissipation (Packages)b miniQFN10c 208 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/C above 70 C. Parameter www.vishay.com 2 Document Number: 74420 S-62532-Rev. A, 01-Jan-07 DG2735/DG2736 Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Test Conditions Unless Otherwise Specified V+ = 3 V, 10 %,VIN = 0.4 V or 1.65 Ve rDS(on) V+ = 2.7 V, INO/NC = 100 mA, VCOM = 0.5 V V+ = 2.7 V, INO/NC = 100 mA, VCOM = 1.5 V V+ = 2.7 V, INO/NC = 100 mA, VCOM = 0.5 V On-Resistance rDS(on) V+ = 2.7 V, INO/NC = 100 mA, VCOM = 1.5 V V+ = 4.3 V, INO/NC = 100 mA, VCOM = 0.9 V V+ = 4.3 V, INO/NC = 100 mA, VCOM = 2.5 V V+ = 4.3 V, INO/NC = 100 mA, VCOM = 0.9 V V+ = 4.3 V, INO/NC = 100 mA, VCOM = 2.5 V rON Match d Limits - 40 to 85 C Tempa Full Room Full Room Full Minb 0 0.4 0.5 0.4 0.3 0.5 Typc Maxb V+ 0.5 0.6 0.5 0.6 Unit V Parameter Analog Switch Analog Signal Ranged Symbol Vanalog rON V+ = 2.7 V, INO/NC = 100 mA, VCOM = 0.5 V, 1.5 V V+ = 4.3 V, INO/NC = 100 mA, VCOM = 0.9 V, 2.5 V V+ = 2.7 V, INO/NC = 100 mA, VCOM = 0.5 V, 1.5 V V+ = 4.3 V, VNO/NC = 0.3 V/3.0 V, VCOM = 3.0 V/0.3 V V+ = 4.3 V, VNO/NC = 0.3 V/3.0 V, VCOM = 3.0 V/0.3 V Room 0.06 0.08 rON resistance flatnessd rON flatness INO/NC(off) ICOM(off) ICOM(on) Room Room Full Room Full Room Full Full Full Full 6 -1 1 5 50 35 50 35 - 70 - 70 50 55 55 130 130 -2 - 10 -2 - 10 -5 - 20 1.65 0.15 2 10 2 10 5 20 nA Switch Off Leakage Current Channel-On Leakage Current Digital Control Input High Voltage Input Low Voltage Input Capacitance Input Current Dynamic Characteristics Break-Before-Make Timee Turn-On Time e VINH VINL CIN IINL or IINH tBBM tON tOFF tON(EN) tOFF(EN) OIRR XTALK d 0.4 1 V pF A VIN = 0 or V+ Full Room Room Full Room Full Room Full Room Full 78 80 58 60 78 80 58 60 dB MHz ns Turn-Off Timee Enable Turn-On Timee DG2736 (EN) Enable Turn-Off Timee DG2736 (EN) Off-Isolationd Crosstalkd 3dB bandwithd NO, NC Off Capacitance V+ = 3.6 V, VNO, VNC = 1.5 V, RL = 50 , CL = 35 pF RL = 50 , CL = 5 pF, f = 100 kHz RL = 50 , CL = 5 pF Room Room CNO(off) CNC(off) CNO(on) CNC(on) VIN = 0 V, or V+, f = 1 MHz Room pF Channel On Capacitance d Document Number: 74420 S-62532-Rev. A, 01-Jan-07 www.vishay.com 3 DG2735/DG2736 Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Test Conditions Unless Otherwise Specified V+ = 3 V, 10 %,VIN = 0.4 V or 1.65 Ve Limits - 40 to 85 C Tempa Minb 1.65 VIN = 0 or V+ Full Typc Maxb 4.3 1.0 Unit V A Parameter Power Supply Power Supply Range Power Supply Current Symbol V+ I+ Notes: a. Room = 25 C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, not subjected to production test. e. VIN = input voltage to perform proper function. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 74420 S-62532-Rev. A, 01-Jan-07 DG2735/DG2736 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 2.4 2.2 2.0 r ON - On-Resistance () 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCOM - Analog Voltage (V) V+ = 4.3 V V+ = 2.7 V V+ = 3.0 V V+ = 3.6 V V+ = 1.8 V V+ = 1.5 V TA = 25 C INO/NC = 100 mA r ON - On-Resistance () 0.6 + 85 C 0.5 0.4 + 25 C 0.3 - 40 C 0.2 0.1 V+ = 2.7 V, IS = 100 mA NO 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCOM - Analog Voltage (V) rON vs. VCOM and Supply Voltage 0.6 + 85 C 0.5 r ON - On-Resistance () r ON - On-Resistance () + 25 C 0.4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 0.5 1 1.5 2 2.5 3 0.0 rON vs. Analog Voltage and Temperature 0.3 - 40 C 0.2 V+ = 2.7 V, IS = 100 mA NC + 85 C + 25 C V+ = 4.3 V, IS = 100 mA NO 0.5 1.0 1.5 2.0 - 40 C 0.1 0.0 VCOM - Analog Voltage (V) 2.5 3.0 3.5 4.0 4.5 VCOM - Analog Voltage (V) rON vs. Analog Voltage and Temperature 1.0 0.9 0.8 r ON - On-Resistance () 0.7 0.6 0.5 + 85 C 0.4 0.3 0.2 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCOM - Analog Voltage (V) V+ = 4.3 V, IS = 100 mA NC 1 - 60 - 40 C + 25 C I+ - Supply Current (pA) 10000 100000 rON vs. Analog Voltage and Temperature V+ = 4.3 V 1000 100 10 - 40 - 20 0 20 40 Temperature (C) 60 80 100 rON vs. Analog Voltage and Temperature Document Number: 74420 S-62532-Rev. A, 01-Jan-07 Supply Current vs. Temperature www.vishay.com 5 DG2735/DG2736 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 100000 V+ = 4.3 V 10000 Leakage Current (pA) tON, t OFF - Switching Time (ns) 20 25 t ON V+ = 2.7 V 1000 ICOM(on) ICOM(off) 100 INC(off) 15 t ON V+ = 4.3 V 10 t OFF V+ = 4.3 V 10 5 t OFF V+ = 2.7 V 1 - 60 - 40 - 20 0 20 40 60 80 100 0 - 60 - 40 - 20 0 20 40 60 80 100 Temperature (C) Temperature (C) Leakage Current vs. Temperature 5 4 3 2 1 0 -1 -2 -3 -4 -5 0.0 Switching Time vs. Temperature 10 LOSS 0 - 10 ICOM(on) LOSS, OIRR, XTALK (dB) Leakage Current (pA) - 20 - 30 OIRR - 40 - 50 - 60 - 70 XTALK ICOM(off) INO(off) DG2735/36 V+ = 3.0 V R L = 50 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 - 80 300 K 1 MHz 10 MHz Frequency (Hz) 100 MHz 1 GHz VCOM, VNO, VNC - Analog Voltage (V) Leakage vs. Analog Voltage Insertion Loss, Off-Isolation Crosstalk vs. Frequency 2.0 VT - Switching Threshold (V) 1.5 1.0 0.5 0.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V+ - Supply Voltage (V) Switching Threshold vs. Supply Voltage www.vishay.com 6 Document Number: 74420 S-62532-Rev. A, 01-Jan-07 DG2735/DG2736 Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ Switch Input Logic Input NO or NC IN GND 0V CL (includes fixture and stray capacitance) VOUT = VCOM Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. RL 50 CL 35 pF COM Switch Output VOUT 0.9 x V OUT Switch Output 0V tON tOFF VINH 50 % VINL tr < 5 ns tf < 5 ns (R L RL +R ON ) Figure 1. Switching Time V+ Logic Input COM VO RL 50 CL 35 pF VINH VINL tr < 5 ns tf < 5 ns V+ VNO VNC NO NC IN GND VNC = V NO VO Switch 0V Output 90 % tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval Document Number: 74420 S-62532-Rev. A, 01-Jan-07 www.vishay.com 7 DG2735/DG2736 Vishay Siliconix TEST CIRCUITS V+ Rgen + V+ NC or NO IN COM VOUT VOUT IN CL = 1 nF GND On VOUT Vgen VIN = 0 - V+ Off Q = VOUT x CL On IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection V+ 10 nF V+ 10 nF V+ NC or NO IN 0 V, 2.4 V V+ COM Meter COM COM IN 0 V, 2.4 V RL GND NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Analyzer Off Isolation = 20 log V NO / NC VCOM Figure 4. Off-Isolation Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74420. www.vishay.com 8 Document Number: 74420 S-62532-Rev. A, 01-Jan-07 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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